Theoretical principles of operation of semiconductor detector based on the p-n-junction

The calculation of the conglomerated charge originating in the p+-n-n+-type semiconductor by interaction with the monoenergy electron beam at the energies within the range of 7-25 keV is accomplished. The electron-hole pairs (EHP) generation is calculated on the basis of the Monte-Carlo method. The analytical expression for the generated EHP contribution into the registered signal is obtained within the frames of the diffusion-drift model. It is shown that the charge losses for recombination in the transport processes noticeably effect the form of the detected signal. Comparison of the modeled energy spectra with the experimentally measured ones demonstrates good agreement of the results