A density functional theoretical investigation of RhSin(n = 1–6) clusters
- 1. Institute of Photonics and Photon-Technology, Northwest University, Xi'an 710069 (China)
- 2. Physics Department of Northwest University, Xi'an 710069 (China)
- 3. Institute of Modern Physics, Northwest University, Xi'an 710069 (China)
Description
This paper computationally investigates the RhSin(n = 1–6) clusters by using a density functional approach. Geometry optimizations of the RhSin(n = 1–6) clusters are carried out at the B3LYP level employing LanL2DZ basis sets. It presents and discusses the equilibrium geometries of the RhSin(n = 1–6) clusters as well as the corresponding averaged binding energies, fragmentation energies, natural populations, magnetic properties, and the energy gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital. Theoretical results show that the most stable RhSin(n = 1–6) isomers keep an analogous framework of the corresponding Sin+1 clusters, the RhSi3 is the most stable cluster in RhSin(n = 1–6) isomers. Furthermore, the charges of the lowest-energy RhSin(n = 1–6) clusters transfer mainly from Si atom to Rh atom. Meanwhile, the magnetic moments of the RhSin(n = 1–6) arises from the 4d orbits of Rh atom. Finally, compared with the Sin+1 cluster, the chemical stability RhSin clusters are universally improved
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/17/6/029Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 17
- Journal Issue
- 6
- Journal Page Range
- p. 2116-2123
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44125307
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ATOMIC CLUSTERS; ATOMS; BINDING ENERGY; COMPARATIVE EVALUATIONS; DENSITY FUNCTIONAL METHOD; ENERGY GAP; ISOMERS; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MOLECULAR ORBITAL METHOD; ORBITS; RHODIUM; SILICON
- Descriptors DEC
- CALCULATION METHODS; ELEMENTS; ENERGY; EVALUATION; METALS; PHYSICAL PROPERTIES; PLATINUM METALS; REFRACTORY METALS; SEMIMETALS; TRANSITION ELEMENTS; VARIATIONAL METHODS