Low-temperature annealing of Al-implanted Si-SiO2 structures
Creators
- 1. Chalmers Tekniska Hoegskola, Goeteborg (Sweden). Forskningslaboratorium foer Elektronik
Description
The capacitance measurement technique is used to study charge and surface state density at the silicon-silicon dioxide interface on MOS structures with 500 A silicon dioxide, implanted with 28 keV Al ions after annealing in several different ambients. The lowest surface state density is obtained after annealing in pure hydrogen, 4500C, 2 h. In many cases there are more negative charges at the interface than the number of Al atoms implanted in the silicon. This is particularly so for incompletely annealed samples. Implantation defects with negative charge are believed to cause this effect. These charged defects are probably located in the oxide, very close to the interface. After annealing at 5000C still some of the defects are left. (author)
Abstract (German)
The capacitance measurement technique is used to study charge and surface state density at the silicon—silicon dioxide interface on MOS structures with 500 Å silicon dioxide, implanted with 28 keV Al ions after annealing in several different ambients. The lowest surface state density is obtained after annealing in pure hydrogen, 450°C, 2 h. In many cases there are more negative charges at the interface than the number of Al atoms implanted in the silicon. This is particularly so for in completely annealed samples. Implantation defects with negative charge are believed to cause this effect. These charged defects are probably located in the oxide, very close to the interface. After annealing at 500°C still some of the defects are left. An MOS-Strukturen mit 500 Å Siliziumdioxid, die mit 28 keV-Al Ionen implantiert wurden, werden Kapazitätsmessungen durchgeführt, um die Ladungsdichte und die Dichte der Oberflächenzustände an der Silizium—Siliziumdioxidgrenzfläche nach Temperung in unterschiedlicher Umgebung zu untersuchen. Die niedrigste Dichte der Oberflächenzustände wird nach zweistündiger Temperung bei 450°C in reinem Wasserstoff erhalten. In manchen Fällen existieren mehr negative Ladungen an der Grenzfläche als die Zahl der in Silizium implantierten Al-Atome. Dies ist insbesondere für nicht vollständig getemperte Proben der Fall. Es wird angenommen, daß Implantationsdefekte mit negativer Ladung diesen Effekt verursachen. Diese geladenen Defekte sind wahrscheinlich im Oxid sehr dicht an der Grenzfläche lokalisiert. Nach Temperung bei 500°C bleiben noch einige dieser Defekte übrig.Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi (a)
- Journal Volume
- 42
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 639-645
- ISSN
- 0031-8965
INIS
- Country of Publication
- German Democratic Republic
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 9348749
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM IONS; ANNEALING; INTERFACES; ION IMPLANTATION; KEV RANGE 10-100; SILICON; SILICON OXIDES
- Descriptors DEC
- ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
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