Electron concentration distribution in silicon after phosphorus ions implantation at elevated temperatures

Phosphorus ions implantation into the KDB-4,5 silicon substrate were performed at target temperatures ranging from 700 to 1100 C. Electron concentration measurement were carried out at room temperature. Specific features due to an influence of implantation temperature manifest themselves at T > 800 C. Within the irradiation temperature range of 850 to 1050 C coefficient of irradiation stimulated diffusion (D) does not depend on Tirr and has been found to be 10-12 cm2 · s-1. Shift of admixture initial position have been observed as a function of irradiation temperature with maximum at about 960 C (∼0,45μ). This effect is treated as a result of abrupt admixture diffusion enhancement due to vacancies flow into the irradiated layer from disordered domains distructing after interstitial atoms have run off. It is concluded that the diffusion coefficient D (D=1·10-12 cm2 · s-1) is not related to the diffusion enhancement due to additional radiation defects available. (author). 10 refs.; 1 fig