Published June 2005 | Version v1
Book Metadata-only

Perspective radiation resistant photodetectors on the basis of AIII BVI types of semiconductors

Creators

  • 1. ANAS, Institute of Physics, Baku (Azerbaijan)

Description

The article is devoted to the development and investigation of radiation resistance of photodiodes on the basis of lamellates connections intended for visible and neighboring infrared spectrum area. Diffusion process and solubility of different impurities in lamellate semiconductors. Radiation resistance of the investigated photodiodes was defined and exposure the opportunity of using in enhanced radiation condition

Part of:
Physics-2005. Proceedings

Additional details

Additional titles

Original title (Russian)
Перпективные радиационностоыкие фотоприёмники на основе полупроводников типа А

Publishing Information

Publisher
Elm local publishing house
Imprint Place
Baku (Azerbaijan)
ISBN
5-8066-1712-2
Imprint Title
Physics-2005. Proceedings
Imprint Pagination
912 p.
Journal Page Range
p. 882-884

Conference

Title
International conference on 60. anniversary of Institute of Physics of National Academy of Sciences of Azerbaijan
Dates
7-9 Jun 2005
Place
Baku (Azerbaijan)

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
45093171
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
DATA ANALYSIS; DIFFUSION; INFRARED SPECTRA; MAXIMUM PERMISSIBLE EXPOSURE; ORGANIC SEMICONDUCTORS; PHOTODETECTORS; RADIATION EFFECTS; SAMPLE PREPARATION; SOLUBILITY; STATISTICAL DATA
Descriptors DEC
DATA; INFORMATION; MATERIALS; NUMERICAL DATA; SAFETY STANDARDS; SEMICONDUCTOR MATERIALS; SPECTRA; STANDARDS

Optional Information

Notes
2 tabs; 4 refs Imprint:Fizika-2005. Megaleler toplusu