Published May 8, 1984 | Version v1
Patent Metadata-only

III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

Creators

Description

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

Availability note (English)

U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.

Additional details

Publishing Information

Imprint Pagination
v p.
IPC:
Int. Cl. H01L 23/48.
IPC
Int. Cl. H01L 23/48.
Patent number
US patent document 4,447,825/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16045979
Subject category
S42: ENGINEERING;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
ALUMINIUM; BERYLLIUM ALLOYS; ELECTRODES; FABRICATION; GALLIUM PHOSPHIDES; GOLD BASE ALLOYS; LAYERS; LIGHT EMITTING DIODES; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; TANTALUM; ZINC ALLOYS
Descriptors DEC
ALLOYS; ELEMENTS; GALLIUM COMPOUNDS; GOLD ALLOYS; MATERIALS; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS

Optional Information

Notes
PAT-APPL-230679.