Published June 2010 | Version v1
Journal article

Influence of the preparation temperature on the SAW velocity of partially oxidized Fe thin films

  • 1. Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Cientificas (CSIC), 28049, Cantoblanco, Madrid (Spain)
  • 2. Centro Microanalisis de Materiales (CMAM), 28049, Cantoblanco, Madrid (Spain)

Description

The influence of the preparation temperature on the surface acoustic wave (SAW) propagation velocity of iron thin films deposited by DC magnetron sputtering has been studied by High Resolution Brillouin Spectroscopy (HRBS). A clear different elastic behaviour has been found for sample grown at 200 K substrate temperature. Numerical simulation has been used to reproduce experimental elastic data and it is possible to relate the difference in elastic response in different samples to the existence of a FeO layer among other oxides. This effect is discussed in relation with the iron oxidation type that also affects the magnetic properties of iron thin films on silicon substrates.

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/12/1/012014

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
12
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1757-899X

Conference

Title
International conference on innovations in thin film processing and characterisation
Acronym
ITFPC 2009
Dates
17-20 Nov 2009
Place
Nancy (France)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43019286
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPUTERIZED SIMULATION; IRON; IRON OXIDES; LAYERS; MAGNETIC PROPERTIES; MAGNETRONS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS
Descriptors DEC
CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; IRON COMPOUNDS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SIMULATION; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS