High frequency performance of individual and arrays of single-walled carbon nanotubes

We have studied the high frequency performance limits of single-walled carbon nanotube (SWNT) transistors in the diffusive transport regime limited by the acoustic phonon scattering. The relativistic band structure of single-walled carbon nanotubes combined with the acoustic phonon scattering provides an analytical model for the charge transport of the radio frequency transistors. We were able to obtain the intrinsic high frequency performance such as the cut-off frequency and the linearity of the SWNT transistors. We have extended our model to include transistors based on arrays of SWNTs. The effect of electrostatic screening in a dense array of SWNTs on the cut-off frequency is studied. (paper)