Published September 13, 2010 | Version v1
Journal article Metadata-only

Epitaxial EuO thin films on GaAs

Creators

  • 1. Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States)
  • 2. Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

Description

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Additional details

Identifiers

DOI
10.1063/1.3490649;
arXiv
arXiv:1008.0898v2;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
97
Journal Issue
11
Journal Page Range
p. 112509-112509.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42060595
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ADSORPTION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CURIE POINT; DIFFUSION BARRIERS; EUROPIUM OXIDES; GALLIUM ARSENIDES; KERR EFFECT; LAYERS; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETO-OPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; ROTATION; THIN FILMS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; EPITAXY; EUROPIUM COMPOUNDS; FILMS; GALLIUM COMPOUNDS; MAGNESIUM COMPOUNDS; MOTION; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RARE EARTH COMPOUNDS; SORPTION; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE

Optional Information

Notes
(c) 2010 American Institute of Physics