Photoelectrical and photoluminescence characteristics in Pr3+ doped Ga-La-S glasses

Photoluminescence in chalcogenide glasses doped with Pr3+ ion has been investigated. The strong photoluminescence bands in the visible region of the spectrum in GLS:Pr3+ glasses are associated with the radiative electron transition from manifold 3P0 to lower laying of the Pr3+ ion. Some photoelectrical characteristics of GLS:Pr3+ glasses also was investigated. The characteristics of the photoconductivity can be treated in the framework of the multiple trapping model of the excited carriers to the localized states exponentially distributed in the band gap of the disordered semiconductor. (authors)