Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors
Creators
- 1. Department of Physics & Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)
- 2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Description
The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds
Additional details
Identifiers
- DOI
- 10.1063/1.4932374;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 14
- Journal Page Range
- p. 141607-141607.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47052181
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CADMIUM TELLURIDES; DENSITY FUNCTIONAL METHOD; MOLECULAR BEAM EPITAXY; NUCLEATION; ORIENTATION; SELECTION RULES; SEMICONDUCTOR MATERIALS; STABILITY; SUBSTRATES; SURFACE ENERGY; SURFACES; SYMMETRY; TWINNING; ZINC SULFIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CALCULATION METHODS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ENERGY; EPITAXY; FREE ENERGY; INORGANIC PHOSPHORS; MATERIALS; PHOSPHORS; PHYSICAL PROPERTIES; SULFIDES; SULFUR COMPOUNDS; SURFACE PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; VARIATIONAL METHODS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC