Spatially ordered InP dots grown on compositionally modulated InGaP layers

Nanoscale semiconductor structures have attracted considerable attention due to their potential application in novel devices based on three- dimensional quantum confinement. In particular, self-assembly of nano structures via Stranski-Krastanow (SK) growth mode is a promising approach for high-throughput nano fabrication. The idea is to epitaxially deposit a few monolayers of one material over a substrate with slightly different lattice parameter. It is commonly accepted that the main driving force for the formation of these strained nano structures is the coherent relaxation of the elastic energy within the nano structure. Such nano structures are usually randomly distributed over a planar substrate and fluctuate in size, creating significant limitations for electronic device applications. Therefore, considerable effort has been focused on controlling the size, uniformity, density and position of the self-assembling nano structures. (author)