Published May 25, 1999 | Version v1
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Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

Creators

Description

The magnetophotoluminescence (MPL) behavior of a GaAs/Al0.3Ga0.7As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the ν=l quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the ν=l/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors

Availability note (English)

Available from INIS in electronic form; ALSO AVAILABLE FROM OSTI AS DE00007061; NTIS; US GOVT. PRINTING OFFICE DEP.

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Additional details

Publishing Information

Imprint Pagination
8 p.
Series
Physical Review Letters
Report number
SAND--99-1314J

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30047127
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM ARSENIDES; EXCITONS; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELDS; PHOTOLUMINESCENCE
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; SEMICONDUCTOR JUNCTIONS

Optional Information

Contract/Grant/Project number
Contract AC04-94AL85000
Notes
Preprint
Funding organization
USDOE (United States)