Study of the mapping mechanism of ferroelectric domains with the scanning force microscope

The piezo-force microscopy (PFM) allows the mapping of ferroelectric domains until the nanometer range. In spite of its simple function principle it was hitherto not completely understood. In ordser to develop the PFM further to a quantitative analysis method its methodical aspects were analyzed. It was shown that the fundamental mapping mechanism is based on the inverse piezo-effect. Different artefacts to be found in the literature could therefore be reduced to a measurement background. Furthermore the influence of the electrode geometry was analyzed. The width of doamin walls was systematically measured and simulated with a mode, whereby a maximal resolution of 17 nm was reached. By the development of a correction procedure for the exact detection of the forces acting on the spring-beam the lateral signals measured on domain walls could by newly interpreted. So the ''Lateral Electrostatic Force Microscopy'' was developed