Ge/Si quantum dots in external electric and magnetic fields

One detected spallation of lines of optical transitions of exciton states into two peaks within Ge/Si system with quantum dots at imposition of electric field. At field intensification one of peaks shifts toward the range of high energies of optical transitions (blue shift), the other one-towards the range of lower energies (red shift). The results are explained on the ground of idea about production of electron-hole dipoles of two types differing in direction of a dipole moment and occurring due to localization of one electron near Ge pyramid apex and to localization of another one - under the pyramid base. On the basis of the method of strong bond one determined the primary values of g-factor of hole states in Ge/Si quantum dots. It is shown that g-factor is a strongly anisotropic one, anisotropy decays at reduction of dimension of quantum dots