Published 2005 | Version v1
Book

Shearing of Si layer in hydrogen-implanted silicon (100) induced by (111) defects of [H*2]ND type

  • 1. Inst. Fiziki Poluprovodnikov SO RAN, Novosibirsk (Russian Federation)
  • 2. NII Yadernoj Fiziki MGU, Moscow (Russian Federation)

Description

no abstract available

Part of:
Summaries of reports of XXXV International conference on physics of interaction of charged particles with crystals

Additional details

Additional titles

Original title (Russian)
Скалывание слоя Си в имплантированном водородом (100) кремнии, инициируемое (111) дефектами вида [Х*

Publishing Information

Publisher
UNTs DO
Imprint Place
Moscow (Russian Federation)
ISBN
5-88800-297-6
Imprint Title
Summaries of reports of XXXV International conference on physics of interaction of charged particles with crystals
Imprint Pagination
200 p.
Journal Page Range
p. 149

Conference

Title
XXXV International conference on physics of interaction of charged particles with crystals
Original Conference Title
XXXV Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
31 May - 2 Jun 2005
Place
Moscow (Russian Federation)

Optional Information

Notes
Imprint:Tezisy dokladov XXXV Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami