Published July 1985 | Version v1
Journal article Metadata-only

Crystallization and defects annealing during highly intensive ion implantation in silicon

Creators

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk. Inst. Prikladnykh Fizicheskikh Problem

Description

The formation and complete recrystallization of an amorphous silicon layer during highly intensive Ar ion implantation have been studied. Rutherford backscattering and electron microscopy techniques have shown some specific features of such a crystallization as compared with a conventional thermal annealing. A model of dynamic cascade annealing of secondary defects is suggested to account for the experimental results. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff. Lett.
Journal Volume
85
Journal Issue
6
Series
Radiat. Eff. Lett.
Journal Page Range
243-247
ISSN
0142-2448

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
16072949
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMORPHOUS STATE; ANNEALING; ARGON IONS; BACKSCATTERING; CRYSTAL DEFECTS; ELECTRON MICROSCOPY; ION IMPLANTATION; ORDER-DISORDER TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; RECRYSTALLIZATION; RUTHERFORD SCATTERING; SILICON
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; IONS; MICROSCOPY; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SCATTERING; SEMIMETALS