Variation of strain/defects in H+-implanted single crystal silicon

Single crystal silicon samples were implanted with H+ ions at an energy of 30 KeV, and a dose of 4x1016/cm2. These samples were annealed in the temperature range from 100 deg. C to 500 deg. C. Four-crystal X-ray diffractometer (FCXRD), cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering spectroscopy and channeling (RBS/C) were used to characterize the distribution and magnitude of the strain and extended defects in the samples. Elastic recoil detection analysis (ERDA) was used to measure the redistribution of hydrogen in Si samples during annealing. Strain distributions in the samples were simulated from the rocking curves by computer. The results help to understand the evolution of the strain and defects during annealing in the high dose H+-implanted silicon samples