Physical characterization of electron trapping in Unibond reg-sign oxides

In this work, the authors study the trapping properties of Unibond reg-sign oxides. They measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, they explain this shift by considering a second type of electron traps