Published 2011 | Version v1
Book

Structural evolution of Hf thin film on Si substrate with annealing: a quadrupole interaction study

  • 1. Radiochemistry Division, Variable Energy Cyclotron Centre, Bhabha Atomic Research Centre, Kolkata (India)
  • 2. Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai (India)
  • 3. Variable Energy Cyclotron Centre, Kolkata (India)

Description

A thin film of Hf was deposited (10 nm) on silicon (111) substrate and its structural behavior with annealing was investigated with Time Differential Perturbed Angular Correlation (TDPAC) technique. Thin film was prepared by Ion Beam Sputtering method. The probe 181Hf/181Ta for TDPAC study was generated by neutron irradiation of the Hf thin film. Results indicate that the HfO2 thin film remains amorphous till the annealing temperature of 1073K. However a small fraction (25%) was converted into crystalline HfO2 in monoclinic phase when annealed at 1273K. Formation of hafnium silicide (HfSi2) at 1273K might also be inferred from the results. (author)

Part of:
Proceedings of DAE-BRNS symposium on nuclear and radiochemistry. V. 1

Additional details

Publishing Information

Publisher
Bhabha Atomic Research Centre
Imprint Place
Mumbai (India)
Imprint Title
Proceedings of DAE-BRNS symposium on nuclear and radiochemistry. V. 1
Imprint Pagination
427 p.
Journal Page Range
p. 244-245

Conference

Title
10. symposium on nuclear and radiochemistry
Acronym
NUCAR 2011
Dates
22-26 Feb 2011
Place
Visakhapatnam (India)

Optional Information

Notes
4 refs., 2 figs., 1 tab.