Characteristics of gallium arsenide radiation semiconductor detectors

The technology is described of the preparation of semiconducting GaAs detectors with specific resistance 107 Ohm cm, dislocation density of 102 cmsup(-2) and lifetime of charge carriers 10sup(-9) s. An investigation is made of the dependence of the pulse amplitude and the resolution on the bias voltage (30-300 V), and the temperature (-50 - +50 deg C), for α-particles with energy 5.5 MeV. From the results, a conclusion is reached on the working capacity of the detector in the temperature rano.e from -50 to +50 deg C. In addition, the counting characteristics of the detector are measured in operation with γ-radiation. It is established that the sensitivity of the detector to hard γ-radiation grows with increasing thickness of the detector to 300 μm, and then falls. The prospects are noted for the use of GaAs detectors for the detection of power pulse fluxes of soft X-rays