Published October 1998
| Version v1
Journal article
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
Creators
- 1. Physikalisches Institut, Universitaet Wuerzburg (Germany)
- 2. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
Description
High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described
Additional details
Identifiers
- DOI
- 10.1134/1.1187546;
- PII
- S1063-7826(98)02810-5;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 32
- Journal Issue
- 10
- Journal Page Range
- p. 1137-1140
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051774
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- BERYLLIUM SELENIDES; CADMIUM SELENIDES; EXPERIMENTAL DATA; LASERS; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STRAINS; SUPERLATTICES; ZINC SELENIDES; ZINC SULFIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BERYLLIUM COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DATA; EPITAXY; INFORMATION; INORGANIC PHOSPHORS; MATERIALS; NANOSTRUCTURES; NUMERICAL DATA; PHOSPHORS; SELENIDES; SELENIUM COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 32, 1272-1276 (October 1998); (c) 1998 American Institute of Physics.