Published December 20, 2010
| Version v1
Journal article
Direct acoustic phonon excitation by intense and ultrashort terahertz pulses
- 1. Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Nikolaou Plastira 100, P.O. Box 1385, Vassilika Vouton, Heraklion 71110 (Greece)
Description
We report on the direct and resonant excitation of acoustic phonons in an AlGaAs intrinsic semiconductor using intense coherent and single cycle terahertz pulses created by two-color femtosecond laser pulse filamentation in air. While the electrons are left unperturbed, we follow the lattice dynamics with time-delayed optical photons tuned to the interband transition.
Additional details
Identifiers
- DOI
- 10.1063/1.3529466;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 97
- Journal Issue
- 25
- Journal Page Range
- p. 251904-251904.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42108866
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; BEAMS; COLOR MODEL; EPITAXY; EXCITATION; GALLIUM ARSENIDES; LASER RADIATION; PHONONS; PHOTONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SOUND WAVES; SPECTRA; TIME DELAY; VELOCITY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BOSONS; COMPOSITE MODELS; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; LASERS; MASSLESS PARTICLES; MATERIALS; MATHEMATICAL MODELS; PARTICLE MODELS; PNICTIDES; QUARK MODEL; QUASI PARTICLES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- (c) 2010 American Institute of Physics