Published March 15, 2011 | Version v1
Journal article

Effect of the film thickness on the impedance behavior of sol-gel Ba0.6Sr0.4TiO3 thin films

  • 1. Microfabrication Cleanroom, School of Microelectronic Engineering, University Malaysia Perlis (UniMAP), Kuala Perlis, 02000 Perlis (Malaysia)

Description

Perovskite Ba0.6Sr0.4TiO3 sol-gel thin films with different thicknesses are fabricated as MFM configuration to study the effect of the film thickness on the dielectric relaxation phenomenon and the ionic transport mechanism. The frequency dependent impedance, electric modulus, permittivity and AC conductivity have been investigated in this context. Z* plane for all the tested samples shows two regions, corresponding to the bulk mechanism and the distribution of the grain boundaries-electrodes process. Electric modulus versus frequency plots reveal non-Debye relaxation peaks. The observed decrease in both the impedance and permittivity with the increase in film thickness is attributed to the grain size effect. The frequency dependent conductivity plots show three regions of conduction processes, i.e. low-frequency region due to DC conduction, mid-frequency region due to translational hopping motion and high-frequency region due to localized hopping and/or reorientational motion.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2011.01.017

Additional details

Identifiers

DOI
10.1016/j.physb.2011.01.017;
PII
S0921-4526(11)00040-8;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
406
Journal Issue
6-7
Journal Page Range
p. 1283-1288
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.