Published May 2014 | Version v1
Book Metadata-only

Mechanism and hardening methods of power MOSFET for high dose rate

Creators

  • 1. Institute of Microelectronics Chinese Academy of Sciences, Beijing (China)

Description

Power MOSFET is the key device for the electric systems, and its stability is very important for the whole systems' working, especially in the radiation environment. In this Paper, the mechanism of the response of power MOSFET in high dose rate are represented, and the hardening methods are given. Experiment results show that the methods have effects. (authors)

Part of:
Progress report on nuclear science and technology in China (Vol.3). Proceedings of academic annual meeting of China Nuclear Society in 2013, No.7--Nuclear electronics and nuclear detection technology sub-volume

Additional details

Publishing Information

Publisher
China Nuclear Physics Society
Imprint Place
Beijing (China)
ISBN
978-7-5022-6129-0
Imprint Title
Progress report on nuclear science and technology in China (Vol.3). Proceedings of academic annual meeting of China Nuclear Society in 2013, No.7--Nuclear electronics and nuclear detection technology sub-volume
Imprint Pagination
336 p.
Journal Page Range
p. 280-283

Conference

Title
2013 academic annual meeting of China Nuclear Society
Dates
10-14 Sep 2013
Place
Harbin (China)

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
48068608
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DOSE RATES; EQUIPMENT; EXPERIMENT RESULTS; HARDENING; IRRADIATION; MOSFET; STABILITY; TRANSIENTS
Descriptors DEC
FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
2 figs., 1 tab., 5 refs.