Published November 1988
| Version v1
Journal article
Interconnect rise time in superconducting integrating circuits
Description
The influence of resistive losses on the voltage rise time of an integrated-circuit interconnection is reported. A distribution-circuit model is used to present the interconnect. Numerous parametric curves are presented based on numerical evaluation of the exact analytical expression for the model's transient response. For the superconducting case in which the series resistance of the interconnect approaches zero, the step-response rise time is longer but signal strength increases significantly
Additional details
Publishing Information
- Journal Title
- International Review of Cytology, Supplement
- Journal Volume
- 35
- Journal Issue
- 11
- Series
- Int. Rev. Cytol., Suppl.
- Journal Page Range
- 1463-1464
- ISSN
- 0074-770X
- CODEN
- ICYSB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20082250
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S42: ENGINEERING;
- Descriptors DEI
- INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MULTI-PARAMETER ANALYSIS; NUMERICAL SOLUTION; POWER LOSSES; SUPERCONDUCTING DEVICES
- Descriptors DEC
- ELECTRONIC CIRCUITS