Published June 11, 2003 | Version v1
Journal article

Argon Ion Induced Changes On Cadmium Iodide Thin Films Using Dense Plasma Focus Device

  • 1. Natural Sciences, National Institute of Education, Nanyang Technological University (Singapore)
  • 2. International Centre for Dense Magnetised Plasmas, Warsaw (Poland)
  • 3. Depatment of Physics, University of Delhi, Delhi (India)

Description

The pulsed beam of energetic argon ions that is generated in dense plasma focus device is used to irradiate the as-grown cadmium iodide films. The film samples were exposed to energetic argon ions at the different distances from the top of the central electrode. The exposed samples were then analyzed for their structure, surface morphology, optical property and elemental composition using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and energy dispersive X-ray spectroscopy (EDX). The comparison of the unexposed and energetic ion exposed film samples is discussed in the present paper

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
669
Journal Issue
1
Journal Page Range
p. 343-346
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
11. international congress on plasma physics
Acronym
ICPP 2002
Dates
15-19 Jul 2002
Place
Sydney (Australia)

Optional Information

Notes
(c) 2003 American Institute of Physics