Dy-Sb-Si system at 1100 K and ternary intermetallic phases in the Dy-Sb-Si and Gd-Sb-Si systems

Physicochemical analysis techniques, including X-ray phase analysis and electron probe X-ray analysis were employed in constructing the isothermal section of the Dy-Sb-Si system at 1100 K. The ternary intermetallic phases Dy55Sb16Si28 [a=0.7746(3) nm, b=1.4853(5) nm, c=0.7761(3) nm], Dy55Sb31Si13 [a=0.7802(3) nm, 1.4972(4) nm, c=0.7817(2) nm] and Gd55Sb15Si29 [a=0.7892(5) nm, b=1.5128(7) nm, c=0.7925(5) nm] crystallize in the orthorhombic Sm5Ge4-type structure (space group Pnma; no. 62). Gd62Sb20Si18 [a=0.8759(2) nm, c=0.6363(1) nm] crystallizes in the hexagonal Mn5Si3-type structure (space group P63/mcm; no. 193)