Published March 1973
| Version v1
Journal article
Effects of room temperature annealing on the luminescence of electron-irradiated ZnS
Creators
- 1. Radiation Center of Osaka Prefecture, Sakai (Japan)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Annu. Rep. Radiat. Center Osaka Prefect.
- Journal Volume
- 13
- Series
- Annu. Rep. Radiat. Center Osaka Prefect.
- Journal Page Range
- 76-78
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 5115939
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; ELECTRON BEAMS; FLUORESCENCE; IRRADIATION; KEV RANGE 100-1000; MEDIUM TEMPERATURE; MONOCRYSTALS; RECOMBINATION; SPECTRA; TEMPERATURE DEPENDENCE; TRAPPING; ZINC SULFIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; CRYSTALS; ENERGY RANGE; HEAT TREATMENTS; INORGANIC PHOSPHORS; KEV RANGE; LEPTON BEAMS; LUMINESCENCE; PARTICLE BEAMS; PHOSPHORS; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS