The influence of compensation on the Hall effect and magnetoresistance of n-Hg0.8Cd0.2Te

Magnetic field dependences of the transverse (ρxx) and the Hall (ρxy) resistances in the temperature range 0.32 ≤ T ≤ 4.2 K on compensated n-Hg0.8Cd0.2Te samples with 0.4 ≤ K ≤ 0.8 and K >∼ 0.9 are studied. It is shown that the metal-insulator transition in fields H >∼ H0xy (H0xy is the field in which ρxy begins to grow sharply) is a result of the separation of the impurity states from the conduction band and is not connected with the Wigner crystallization. The weakening of ρxy(H) and ρxx(H) growth in strong magnetic fields with the increase of K may be satisfactorily explained in the framework of inhomogeneous medium theory. (author)