Interfacial Octahedral Manipulation Imparts Hysteresis-Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure

Much like epitaxial strain, engineering oxygen octahedral rotations (OORs) in perovskite oxide thin films can be a powerful means of manipulating their physical and chemical properties. Here, it is demonstrated that the fundamental character of the metal-insulator transition (MIT) can be sensitively controlled by the structure of the oxygen sublattice for NdNiO₃ thin films grown epitaxially on NdGaO₃ (110) substrates. The MIT is sharp and hysteretic for a Ni-O-Ni bond angle of 154.0° (6 nm thick film) like the bulk behavior, while it is diffuse and largely nonhysteretic for a bond angle of 149.5° (3 nm thick film), stemming from the smaller bond angle of the NdGaO₃ substrate. Using synchrotron X-ray diffraction to quantify the geometric framework of the oxygen sublattice, it is found that the influence of the substrate OORs propagates and decays after a few nanometers into the ultrathin film. The sublattice structure in the 6 nm thick film is similar to that for bulk NdNiO₃, leading to the sharp and hysteretic MIT.