Growth properties of poly(tetrafluoroethylene) films by synchrotron radiation ablation

High-quality poly(tetrafluoroethylene) (PTFE) films have been grown on Si substrates by synchrotron radiation ablation of a PTFE target. Only doublet absorption structures assigned to C-F asymmetric and symmetric stretching vibrations in CF2 groups are observed, suggesting that the CF2 groups in the grown PTFE film are organized in an ordered manner through linear attachment. The growth rate of the PTFE films increases with increasing target temperature, while it decreases with increasing substrate temperature. It has been shown that the thickness of the PTFE film with a high-spatial-resolution structure can be easily controlled at nanometer order by changing the synchrotron radiation irradiation dose. (author)