Published July 2000 | Version v1
Journal article Metadata-only

Hall effect and thermoelectric power in Bi1-xSbx thin films

Creators

  • 1. P.G. Dept. of Physical Chemistry, M.S.G. College, Malegaon (India)
  • 2. Dept. of Physics, M.S.G. College, Malegaon (India)

Description

Thin films of Bi1-x Sbx of varying compositions and thickness have been formed on glass substrates employing three-temperature method. Hall coefficient (RH), Hall mobility (μH), carrier concentration (n) and thermoelectric power (α) have been studied as a function of composition, thickness and temperature of the film. The films of Bi1-xSbx show n-type behaviour for 070 at %) respectively. (author)

Additional details

Publishing Information

Journal Title
Indian Journal of Physics. Part A
Journal Volume
74
Journal Issue
4
Journal Page Range
p. 419-422
CODEN
INJADP

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
31061404
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANTIMONY; BISMUTH; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; GLASS; HALL EFFECT; N-TYPE CONDUCTORS; SUBSTRATES; THERMOELECTRIC CONVERSION; THERMOELECTRICITY; THIN FILMS
Descriptors DEC
CONVERSION; DIRECT ENERGY CONVERSION; ELECTRICAL PROPERTIES; ELECTRICITY; ELEMENTS; ENERGY CONVERSION; FILMS; MATERIALS; METALS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS

Optional Information

Notes
23 refs., 7 figs.