Characterization of doped Si-TiSi2 bi-layers formed by ion beam mixing and rapid thermal annealing

Transition metal silicides are of great interest in MOS VLSI technology as contact material for shallow junctions. At the same time, rapid thermal annealing has recently become of interest in silicon processing as a technique to active ion implanted dopants, remove defects and regrow amorphized silicon with minimal redistribution of dopant atoms. Implantation after Ti deposition received special attention, since it was expected that this would result in a smooth silicide surface and silicide/silicon interface. The out-diffusion of implanted species during TiSi2 formation as reported for conventional annealing treatments can be limited using rapid thermal processing to levels attractive for applications in devices. Sheet resistance and stoichiometry of the Ti/sub x/Si/sub y/ films were studied for reaction temperatures between 6000C and 11500C for 10 s. In this way TiSi2 films were obtained with a resistivity of 15 μ l cm