Published November 1, 2017 | Version v1
Journal article

High sensitive InP emitter for InP/InGaAs heterostructures

  • 1. Peter the Great Saint – Petersburg Polytechnic University, Saint Petersburg 195251 (Russian Federation)
  • 2. Bonch-Bruevich Saint – Petersburg State University of Telecommunications, Saint Petersburg 193232 (Russian Federation)

Description

Results of indium phosphide structures research, showing the possibility of using in the near infrared range (NIR) photocathodes of InP / InGaAs, are represented. An optimal method of obtaining the atomically clean indium phosphide surface was suggested. The spectral characteristics of indium phosphide and InP/InGaAs heterostructure were given. Researches of the photoemission dependence of the structure with surface grid electrode upon different supply voltages were carried out. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/917/6/062019

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
917
Journal Issue
6
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
4. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
Acronym
Saint Petersburg OPEN 2017
Dates
3-6 Apr 2017
Place
Saint-Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52061059
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; NEAR INFRARED RADIATION; PHOTOCATHODES; PHOTOEMISSION; SURFACES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CATHODES; ELECTRODES; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFRARED RADIATION; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SECONDARY EMISSION