Mass transfer in monocrystals of molybdenum and silicon carbide under irradiation by glow discharge low-energy ions

Investigated has been the effect of defects, generated while processing by plasma ions, on the mass transfer is monocrystals of molybdenum and silicon carbide, coated by a layer of (Mo-W2; Mo-Pm2O3; Mo-VO2; SiC-11C; SiC-Pm2O3) diffusant. The scheme of a device for mass transfer investigation is presented. To study the influence of defects the change of the diffusant concentration has been determined both on the segments of samples, subjected to the effect of glow discharge and on the segment protected by a shield. The values of mutual diffusion coefficients for Mo-W pair are shown to be the same for all the samples at high concentration (approximately 50%) of the diffusant. At low concentration of the diffusant (<= 30%) processing in the discharge increases approximately 10 times the values of the mutual diffusion coefficient. Intensification of mass transfer in dislocations is established for Mo-VO2; Mo-Pm2O3; SiC-14C; SiC-Pm2O3 pairs at continuous generating of structural defects in discharge plasma