Published May 26, 2014 | Version v1
Journal article

Temperature dependence of photoluminescence properties in a thermally activated delayed fluorescence emitter

  • 1. Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Nakaku, Sakai 599-8531 (Japan)
  • 2. The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, Sakai 599-8531 (Japan)
  • 3. International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)
  • 4. Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)

Description

Using steady-state and time-resolved photoluminescence (PL) spectroscopy, we have investigated the temperature dependence of PL properties of 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyano-benzene (4CzIPN), which have a small energy gap between its singlet and triplet excited states and thus exhibits efficient thermally activated delayed fluorescence [H. Uoyama et al., Nature 492, 235 (2012)]. Below around 100 K, PL quantum efficiency of 4CzIPN thin films is largely suppressed and strong photoexcitation intensity dependence appears. These features can be explained by using rate equations for the densities of singlet and triplet excited states considering a triplet-triplet annihilation process.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
21
Journal Page Range
p. 213303-213303.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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