Published May 10, 2006 | Version v1
Journal article

Fluxless flip chip bonding with joint-in-via architecture

  • 1. Micron Semiconductor Asia Pte Ltd, 990 Bendemeer Road, Singapore 339942 (Singapore) and School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  • 2. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  • 3. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  • 4. Micron Semiconductor Asia Pte Ltd, 990 Bendemeer Road, Singapore 339942 (Singapore)

Description

Flux and its residues impede flip chip deployment in the packaging and integration of microelectronic, optoelectronic, and micro-electromechanical systems. This paper describes a novel fluxless method of bonding Au studs with eutectic solder confined within cavities on a flex substrate. The joint structure was examined by scanning electron microscopy and energy-dispersive X-ray. In solid-state bonding, the joints are weak and unable to endure assembly processes. Bonding can occur with a joint-in-via (JIV) architecture with an optimized bonding condition when the solder is molten. Instantaneous fluxless bonding, known as thermo-mechanical bonding, was assessed and tolerated a standard reliability test. This fluxless bonding technique is applicable to heat-sensitive devices because of its heat-isolating bonding capability

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.09.111;
PII
S0040-6090(05)01737-2;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
504
Journal Issue
1-2
Journal Page Range
p. 436-440
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
International conference on materials for advanced technologies - Symposium H: Silicon microelectronics: Processing to packaging
Acronym
ICMAT 2005
Dates
3-8 Jul 2005
Place
Singapore (Singapore)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38004569
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BONDING; EUTECTICS; GOLD ALLOYS; RELIABILITY; SCANNING ELECTRON MICROSCOPY; X RADIATION
Descriptors DEC
ALLOYS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; FABRICATION; IONIZING RADIATIONS; JOINING; MICROSCOPY; RADIATIONS; TRANSITION ELEMENT ALLOYS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.