Fluxless flip chip bonding with joint-in-via architecture
- 1. Micron Semiconductor Asia Pte Ltd, 990 Bendemeer Road, Singapore 339942 (Singapore) and School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
- 2. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
- 3. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
- 4. Micron Semiconductor Asia Pte Ltd, 990 Bendemeer Road, Singapore 339942 (Singapore)
Description
Flux and its residues impede flip chip deployment in the packaging and integration of microelectronic, optoelectronic, and micro-electromechanical systems. This paper describes a novel fluxless method of bonding Au studs with eutectic solder confined within cavities on a flex substrate. The joint structure was examined by scanning electron microscopy and energy-dispersive X-ray. In solid-state bonding, the joints are weak and unable to endure assembly processes. Bonding can occur with a joint-in-via (JIV) architecture with an optimized bonding condition when the solder is molten. Instantaneous fluxless bonding, known as thermo-mechanical bonding, was assessed and tolerated a standard reliability test. This fluxless bonding technique is applicable to heat-sensitive devices because of its heat-isolating bonding capability
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.09.111;
- PII
- S0040-6090(05)01737-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 504
- Journal Issue
- 1-2
- Journal Page Range
- p. 436-440
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- International conference on materials for advanced technologies - Symposium H: Silicon microelectronics: Processing to packaging
- Acronym
- ICMAT 2005
- Dates
- 3-8 Jul 2005
- Place
- Singapore (Singapore)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38004569
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BONDING; EUTECTICS; GOLD ALLOYS; RELIABILITY; SCANNING ELECTRON MICROSCOPY; X RADIATION
- Descriptors DEC
- ALLOYS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; FABRICATION; IONIZING RADIATIONS; JOINING; MICROSCOPY; RADIATIONS; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.