Published November 23, 2012 | Version v1
Journal article Metadata-only

Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As

Creators

  • 1. Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy)
  • 2. Institut für Experimentelle Physik, Universität Regensburg, D-93040 Regensburg (Germany)
  • 3. CNISM and L-NESS—Politecnico di Milano, Via Anzani 42, I-22100 Como (Italy)

Description

We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001) ∥ MgO[110](001) ∥ (Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/23/46/465202

Additional details

Identifiers

DOI
10.1088/0957-4484/23/46/465202;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
23
Journal Issue
46
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44046731
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ANISOTROPY; COVERINGS; CRYSTAL GROWTH; ELECTRON BEAMS; EPITAXY; EVAPORATION; FILMS; GALLIUM ARSENIDES; IRON; KERR EFFECT; LAYERS; MAGNESIUM OXIDES; MANGANESE ARSENIDES; SPIN; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; GALLIUM COMPOUNDS; LEPTON BEAMS; MAGNESIUM COMPOUNDS; MANGANESE COMPOUNDS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PARTICLE PROPERTIES; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS