Published May 2015 | Version v1
Journal article

Development of micro-four-point probe in a scanning tunneling microscope for in situ electrical transport measurement

  • 1. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

Description

Electrons at surface may behave differently from those in bulk of a material. Multi-functional tools are essential in comprehensive studies on a crystal surface. Here, we developed an in situ microscopic four-point probe (4PP) transport measurement system on the basis of a scanning tunneling microscope (STM). In particular, convenient replacement between STM tips and micro-4PPs enables systematic investigations of surface morphology, electronic structure, and electrical transport property of a same sample surface. Performances of the instrument are demonstrated with high-quality STM images, tunneling spectra, and low-noise electrical I-V characteristic curves of a single-layer FeSe film grown on a conductive SrTiO3 surface

Additional details

Identifiers

Publishing Information

Journal Title
Review of Scientific Instruments
Journal Volume
86
Journal Issue
5
Journal Page Range
p. 053903-053903.5
ISSN
0034-6748
CODEN
RSINAK

Optional Information

Notes
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