Published October 15, 2004 | Version v1
Journal article

Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer

  • 1. Division of Electrical and Computer Engineering, Advanced Semiconductor Research Center, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

Description

Photoluminescence (PL) measurements on modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs single and step quantum wells were carried out to investigate the interband transitions and to determine the activation energies in InyGa1-yAs quantum wells. The activation energy of the electrons confined in the step quantum well, as obtained from the temperature-dependent PL spectra, was larger than that of the electrons confined in the single quantum well. The enhancement of the activation energy in the modulation-doped single quantum wells due to an embedded deep step layer originated from an increase in the energy difference between the ground electronic state and the AlxGa1-xAs conduction band edge in the InyGa1-yAs quantum well. These results indicate that the activation energy in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs single quantum wells depends on the electronic structure

Additional details

Identifiers

DOI
10.1016/j.mseb.2004.06.021;
PII
S0921-5107(04)00299-5;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
113
Journal Issue
1
Journal Page Range
p. 56-59
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.