Published January 2006 | Version v1
Report Restricted

Permanent damage in silicon carbide Schottky barrier diode caused by Ni ion irradiation

Creators

  • 1. Japan Aerospace Exploration Agency, Institute of Space Technology and Aeronautics, Space Component Engineering Center, Chofu, Tokyo (Japan)
  • 2. RYOEI TECHNICA Corporation, Engineering Dept., Components Engineering Section, Kamakura, Kanagawa (Japan)
  • 3. Japan Atomic Energy Research Inst., Tokai Research Establishment, Tokai, Ibaraki (Japan)
  • 4. Kumamoto National College of Technology, Dept. of Electronic Engineering, Kumamoto (Japan)

Description

no abstract available

Files

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Part of:
JAERI TANDEM annual report 2004. April 1, 2004 - March 31, 2005

Additional details

Publishing Information

Imprint Title
JAERI TANDEM annual report 2004. April 1, 2004 - March 31, 2005
Imprint Pagination
157 p.
Journal Page Range
p. 103-104
Report number
JAEA-Review--2005-004

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
37077550
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
DEPLETION LAYER; ENERGY GAP; EPITAXY; IRRADIATION; LEAKAGE CURRENT; MEV RANGE 100-1000; NICKEL IONS; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; CURRENTS; ELECTRIC CURRENTS; ENERGY RANGE; IONS; LAYERS; MATERIALS; MEV RANGE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS

Optional Information

Notes
2 refs., 3 figs.