Published September 1980
| Version v1
Journal article
Far infrared emission from plasma oscillations of Si inversion layers
Description
Narrow-band far infrared emission from Si-MOSFETs was observed with metallic gratings fabricated on the optically semitransparent gate. The gate voltage dependence of the emission frequency, analyzed by a magnetic field tuned detector, shows that it results from radiative decay of the two-dimensional plasmons of the inversion layer, through coupling with the metallic grating. (author)
Additional details
Publishing Information
- Journal Title
- Solid State Commun.
- Journal Volume
- 35
- Journal Issue
- 11
- Series
- Solid State Commun.
- Journal Page Range
- 875-877
- ISSN
- 0038-1098
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 12576457
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EMISSION; FAR INFRARED RADIATION; GATING CIRCUITS; MOSFET; PLASMA WAVES; PLASMONS; RADIATIVE DECAY; SILICON
- Descriptors DEC
- DECAY; ELECTROMAGNETIC PARTICLE DECAY; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ELEMENTS; INFRARED RADIATION; MOS TRANSISTORS; PARTICLE DECAY; QUASI PARTICLES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS; WEAK PARTICLE DECAY