Effects of moiré lattice structure on electronic properties of graphene
Creators
- 1. Ames Laboratory and Iowa State University, Ames, IA (United States)
Description
Here, we study structural and electronic properties of graphene grown on silicone carbide (SiC) substrate using a scanning tunneling microscope, spot-profile-analysis low-energy electron diffraction, and angle-resolved photoemission spectroscopy. We find several new replicas of Dirac cones in the Brillouin zone. Their locations can be understood in terms of a combination of basis vectors linked to SiC 6 × 6 and graphene 6√3×6√3 reconstruction. Therefore, these new features originate from the moiré caused by the lattice mismatch between SiC and graphene. More specifically, Dirac cone replicas are caused by underlying weak modulation of the ionic potential by the substrate that is then experienced by the electrons in the graphene. We also demonstrate that this effect is equally strong in single- and trilayer graphene; therefore, the additional Dirac cones are intrinsic features rather than the result of photoelectron diffraction. These new features in the electronic structure are very important for the interpretation of recent transport measurements and can assist in tuning the properties of graphene for practical applications.
Availability note (English)
Available from http://www.osti.gov/pages/biblio/1374743; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Identifiers
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 96
- Journal Issue
- 3
- Journal Page Range
- vp.
- ISSN
- 2469-9950
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 48102701
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BRILLOUIN ZONES; CONES; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GRAPHENE; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDES; TUNNEL EFFECT
- Descriptors DEC
- CARBIDES; CARBON; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; MICROSCOPY; NONMETALS; SCATTERING; SECONDARY EMISSION; SILICON COMPOUNDS; SPECTROSCOPY; ZONES
Optional Information
- Contract/Grant/Project number
- AC02-07CH11358
- Funding organization
- USDOE (United States)
- Secondary number(s)
- IS-J--9404; OSTIID--1374743