Published November 2012
| Version v1
Journal article
Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wells
- 1. Hanyang University, Seoul (Korea, Republic of)
- 2. Korea institute of Science and Technology, Seoul (Korea, Republic of)
- 3. Kyung Hee University, Seoul (Korea, Republic of)
Description
Strained InGaAlP/In0.5Al0.5P multiple quantum wells (MQWs) with digital alloy wells made of alternating 3-monolayer In0.5Ga0.5P and 2-monolayer In0.5Al0.5P layers were grown by using molecular-beam epitaxy. The electronic subband energy states and the interband transition energies of the InGaAlP/InAlP MQWs were calculated by using the finite element method to solve the Schrodinger equation in an 8-band envelope function approximation including the strain effects. The calculated interband transitions of the InGaAlP/InAlP MQWs were in reasonable agreement with the excitonic transitions obtained from the photoluminescence spectra.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 61
- Journal Issue
- 10
- Series
- 20 refs, 3 figs, 1 tab
- Journal Page Range
- p. 1724-1727
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 46011827
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE STATES; ENERGY-LEVEL TRANSITIONS; EXCITONS; FINITE ELEMENT METHOD; INDIUM COMPLEXES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SCHROEDINGER EQUATION
- Descriptors DEC
- CALCULATION METHODS; COMPLEXES; CRYSTAL GROWTH METHODS; DIFFERENTIAL EQUATIONS; EMISSION; EPITAXY; EQUATIONS; LUMINESCENCE; MATHEMATICAL SOLUTIONS; NANOSTRUCTURES; NUMERICAL SOLUTION; PARTIAL DIFFERENTIAL EQUATIONS; PHOTON EMISSION; QUASI PARTICLES; WAVE EQUATIONS