IMSOP - a program for the simulation and optimization of ion implantation

A corrected two-section model of concentration profiles for B+, P+ and As+ implanted into silicon is given. The diffusion and electrical activation dependent on the concentration of Si+ in GaAs is considered. Using the progressive compensation method (PCM) to find the optimum quantities for implantation, a special program IMSOP has been written that quickly finds the best conditions to make any wanted dopant profile, e.g. an even profile and a double-peak profile. The simulated results are consistent with the experimental values. Using 29Si+ implanted GaAs wafer designed using IMSOP, fairly good MESFETs have been fabricated. (author)