Published 1987 | Version v1
Report Restricted

A model describing hot-carrier and radiation effects in MOS transistors

Creators

Description

In this paper the relative types and magnitudes of damage produced by ionizing radiation and hot carriers for a current CMOS technology and how these effects are related are discussed. A model that qualitatively describes these effects is presented

Availability note (English)

Available from NTIS, PC A02/MF A01; 1 as DE87006121.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
SAND--87-0205C

Conference

Title
24. annual conference on nuclear and space radiation in electronics.
Dates
28-31 Jul 1987.
Place
Snowmass, CO (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
19001878
Subject category
S42: ENGINEERING; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGE CARRIERS; HOLE MOBILITY; INTERFACES; MATHEMATICAL MODELS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS
Descriptors DEC
MOBILITY; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
Portions of this document are illegible in microfiche products.
Secondary number(s)
CONF-870724--10.