Efficient ionization of atomic tin assisted by N-type multiphoton Raman resonances
- 1. Rare Isotope Science Project, Institute for Basic Science, Daejeon 34047 (Korea, Republic of)
- 2. Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 61005 (Korea, Republic of)
- 3. Center for Relativistic Laser Science, Institute for Basic Science, Gwangju 61005 (Korea, Republic of)
Description
We report on the experimental results for laser ionization spectroscopy of atomic tin using a four-color three-step laser ionization scheme in conjunction with an atomic beam apparatus. Typically, the laser ionization efficiency is remarkably limited for certain elements whose thermal population is distributed over its higher lying components of the fine structure at high temperature (e.g. about 2000 K). We demonstrate that the laser ionization efficiency can be increased by simultaneous excitation from the and fine-structure components of the 5s25p2 ground-state of atomic tin. This was achieved using two lasers, operating at 283 nm and 301 nm. Furthermore, four-level N-type mutiphoton Raman resonances in this four-color ionization scheme can be utilized to enhance the ionization efficiency allowing an additional ionization process from the third ground state .
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2017.10.031Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2017.10.031;
- PII
- S0168583X17309503;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 414
- Journal Page Range
- p. 79-83
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54106085
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC BEAMS; EFFICIENCY; EXCITATION; FINE STRUCTURE; GROUND STATES; IONIZATION; LASERS; MULTI-PHOTON PROCESSES; RESONANT-IONIZATION LASER ION SOURCES; TEMPERATURE RANGE 1000-4000 K; TIN
- Descriptors DEC
- BEAMS; ELEMENTS; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; ION SOURCES; LASER ION SOURCES; METALS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier B.V. All rights reserved.