Published August 2008 | Version v1
Journal article Metadata-only

High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz

Creators

  • 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
  • 2. State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

Description

A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of each finger is 1 × 15μm2. The breakdown voltage is more than 7 V, the maximum collector current could be more than 100 mA. The current gain cutoff frequency is as high as 155 GHz and the maximum oscillation frequency reaches 253 GHz. The heterostructure bipolar transistor can offer more than 70mW class-A maximum output power at W band and the maximum power density can be as high as 1.2W/mm. (cross-disciplinary physics and related areas of science and technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/25/8/091

Additional details

Identifiers

DOI
10.1088/0256-307X/25/8/091;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
8
Journal Page Range
p. 3075-3078
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44123557
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GAIN; GALLIUM ARSENIDES; GHZ RANGE; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; OSCILLATIONS; POWER DENSITY; TRANSISTORS
Descriptors DEC
AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS