Features of the mechanism of charge transport in layered crystals

The temperature dependences (T=5-300) of specific resistance in layer planes and in direction perpendicular to layer in layered crystals InSe and pyrolytic graphites of PG3000 and PG2700 brands are investigated. it is shown that electroconductivity anisotropy does nor correspond to anisotropy of charge carrier effective masses in these crystals. it is established that low-temperature conductivity in the direction perpendicular to layers in layered semiconductor InSe and pyrolytic graphites of PG3000 and PG2700 is realized by charge jumps over the localized states. (author)